Study on depuration technics for negative electron affinity GaN photocathode

摘要

As a new type ultraviolet (UV) photocathode, negative electron affinity (NEA) gallium nitride (GaN) photocathode has many good performance characteristics, such as high quantum efficiency, low dark current and concentrated electron energy distribution and so on. NEA GaN photocathode is widely used in such fields as vacuum electron source, high-performance ultraviolet detector etc. The ideal atom clean surface is very important to activation for NEA GaN photocathode. The cleanness degree of photocathode surface is direct to influence the sensitivity and stability of NEA GaN photocathode. But how to get an ideal atom clean surface is still a question to many researchers.