An improved compact model of cross-shaped horizontal CMOS-integrated Hall-effect sensor

摘要

A new compact model of a cross-shaped horizontal integrated Hall-effect sensor is presented in this paper. Compared to existing models, the model reliability is improved, especially for designs in which the bias and the measurement circuits are not independent. The Hall device model uses six subcomponents, each modeling the non-linear resistance due to the sensor space charge region modulation and the Hall voltage. The model is implemented in VHDL-AMS and Verilog-A. It includes 10 parameters (physical parameters of the semiconductor and sensor geometry). The model gives simulation results that are in accordance with classic experimental results founded in the literature.