首页> 外文会议>18th IEEE International Symposium on the Applications of Ferroelectrics (ISAF 2009) >Influence of Sintering Temperature on Phase Structure and Electrical Properties of Mg-doped (Li, Na, K)NbO3 Lead-Free Piezoelectric Ceramics
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Influence of Sintering Temperature on Phase Structure and Electrical Properties of Mg-doped (Li, Na, K)NbO3 Lead-Free Piezoelectric Ceramics

机译:烧结温度对掺镁(Li,Na,K)NbO3无铅压电陶瓷相结构和电性能的影响

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Mg-doped (Li, Na, K)NbO3 lead-free piezoelectric ceramics with a nominal composition of [Li0.06(Na0.5K0.5)0.94](Nb0.198Mg0.005)O3 (LNKNM) was prepared by normal sintering method. The microstructure and electrical properties were studied with a special emphasis on the influence of sintering temperature in the range of 920-1020 C. A MPB bridging tetragonal and orthorhombic symmetry was found as the sintering temperature was raised from 980 to 1000 C, whereby enhanced electrical properties were obtained. The highest d33, kp, TC, and Pr were 238 pC/N, 41.5%, 470 C, and 38.2 レC/cm2, respectively.
机译:通过常规烧结制备了标称组成为[Li0.06(Na0.5K0.5)0.94](Nb0.198Mg0.005)O3(LNKNM)的掺Mg(Li,Na,K)NbO3无铅压电陶瓷。方法。研究了微观结构和电性能,并特别强调了烧结温度在920-1020 C范围内的影响。当烧结温度从980提高到1000 C时,发现MPB桥接了四方和正交的对称性。获得性能。最高的d33,kp,TC和Pr分别为238 pC / N,41.5%,470 C和38.2レC / cm2。

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