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A New Method for Direct Determination of Trap Level Distribution from TSC Measurement

机译:基于TSC测量直接确定陷阱水平分布的新方法

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Thermally stimulated current (TSC) is developed and a new method for direct determination of trap level distribution in polymer film is proposed. In this method, a new function is defined to weight the contribution of a trap level to the current at any temperature. The demarcation energy is used to study the trap empty process. Analysis shows that only electrons with trap levels very close to the demarcation energy significantly contribute to the external circuit. Based on this method, the trap level distribution of polyimide is investigated. Experiments found that a broad peak appeared at about 440K on TSC spectrum. The trap level distribution exhibits a density peak at about 1.35eV. This is in accordance with the theoretical analysis by the proposed method which shows that only electrons with trap levels close to 1.3eV contribute to the current at 440K around.
机译:开发了热激电流(TSC),提出了一种直接测定聚合物膜中陷阱能级分布的新方法。在此方法中,定义了一个新函数来加权陷阱电平对任何温度下电流的贡献。分界能量用于研究陷阱的清空过程。分析表明,只有陷阱能级非常接近分界能的电子才对外部电路有显着贡献。基于此方法,研究了聚酰亚胺的陷阱能级分布。实验发现,在TSC光谱上约440K处出现一个宽峰。陷阱能级分布在约1.35eV处显示出密度峰值。这与所提出方法的理论分析一致,该方法表明只有陷阱能级接近1.3eV的电子才对440K附近的电流起作用。

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