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Material removal rate based on edge effects in ultra precision polishing process

机译:超精密抛光工艺中基于边缘效应的材料去除率

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Based on the edge effects in the ultra precision polishing process, a revised skin model is used to predict material removal rate (MRR) of circular wafer. With force equation and torque equation, in order to calculate the skin width and the pressure distribution, a revised formula is given. According to Preston's equation, by using Math-Cad software, the material removal rate (MRR) of circular wafer is simulated, and two factors which influence MRR are discussed.One is the distance between the circular wafer center and the polishing tool center; the other is the ratio of the angular velocity of circular wafer to the polishing tool angular velocity.
机译:基于超精密抛光过程中的边缘效应,使用修改后的蒙皮模型来预测圆形晶圆的材料去除率(MRR)。利用力方程和扭矩方程,为了计算蒙皮宽度和压力分布,给出了修正公式。根据Preston方程,利用Math-Cad软件,对圆形晶片的材料去除率(MRR)进行了仿真,讨论了两个影响MRR的因素。另一个是圆形晶片角速度与抛光工具角速度之比。

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