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Compact thermal modeling of hot spots in advanced 3D-stacked ICs

机译:先进的3D堆叠IC中热点的紧凑热模型

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This paper presents a new generic methodology used to determine a parameterized compact thermal model for 3-D stacked integrated circuits (3D-SIC). The method allows to calculate the thermal distribution due to hot spots in the die stack. This approach is applied to different case studies of stacked dies configurations. In order to demonstrate the method, a fully generic non-uniform heat sources ¿grid¿ with grid size of 100 ¿m has been considered. With this approach it is possible to derive an easy-to-use, fast prediction tool that, together with a user friendly graphical interface, allows to obtain the temperature distribution in the dies with good accuracy. Parameters such as the structure geometry, the thermal properties of the materials involved and the effects of the presence of a package resistance are investigated. It is demonstrated that this tool can be used for a fast optimization for the structural parameters, thus helping to design a 3-D die stack when a need for thermal management arises.
机译:本文提出了一种新的通用方法,用于确定3D堆叠集成电路(3D-SIC)的参数化紧凑型热模型。该方法允许计算由于管芯堆叠中的热点引起的热分布。该方法适用于堆叠模具配置的不同案例研究。为了演示该方法,已经考虑了网格大小为100μm的完全通用的非均匀热源grid。通过这种方法,有可能获得一种易于使用的快速预测工具,该工具与用户友好的图形界面一起,可以以高精度获得模具中的温度分布。研究了诸如结构几何形状,所涉及材料的热性能以及封装电阻存在的影响等参数。实践证明,该工具可用于结构参数的快速优化,从而在需要热管理时帮助设计3-D模具叠层。

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