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Resistive Switching in Metal Oxide Films Deposited by Metalorganic Chemical Vapor Deposition

机译：金属有机化学气相沉积沉积的金属氧化物膜中的电阻转换

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Pr_(1-x)Ca_xMnO_3 (PCMO) films were deposited by metalorganic chemical vapor deposition using in situ infrared spectroscopic monitoring. The I-V characteristics were investigated in the PCMO-based devices exhibiting electrical-pulse-induced resistive switching. The frequency response analysis suggested that the resistance switching in the PCMO-based devices was mainly due to the resistance change in the interface between the film and the electrode.

机译：Pr_（1-x）Ca_xMnO_3（PCMO）膜是使用原位红外光谱监测通过金属有机化学气相沉积法沉积的。在表现出电脉冲感应电阻切换的基于PCMO的设备中研究了I-V特性。频率响应分析表明，基于PCMO的设备中的电阻切换主要是由于薄膜与电极之间界面的电阻变化所致。

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《EuroCVD 17/CVD 17》|2009年|p.865-869|共5页
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Toshihiro Nakamura; Keita Onogi; Kohei Homma; Kunihide Tachibana;
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中图分类真空镀与气相镀法;
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1. Bipolar Switching Behavior of ZnO (x) Thin Films Deposited by Metalorganic Chemical Vapor Deposition at Various Growth Temperatures [J] . Bae Seonho, Kim Dae-Sik, Jung Seojoo, Journal of Electronic Materials . 2015,第11期

机译：金属有机化学气相沉积在不同生长温度下沉积的ZnO（x）薄膜的双极转换行为
2. Metalorganic chemical vapor deposition of metal oxide films exhibiting electric-pulse-induced resistance switching [J] . Nakamura T, Homma K, Yakushiji T, Surface & Coatings Technology . 2007,第22a23期

机译：表现出电脉冲感应电阻转换的金属氧化物膜的金属有机化学气相沉积
3. Effect of deposition temperature on the characteristics of hafnium oxide films deposited by metalorganic chemical vapor deposition using amide precursor [J] . Kenji Takahashi, Hiroshi Funakubo, Shiro Hino Journal of Materials Research . 2004,第2期

机译：沉积温度对酰胺前驱体金属有机化学气相沉积法氧化ha薄膜特性的影响
4. Resistive Switching in Metal Oxide Films Deposited by Metalorganic Chemical Vapor Deposition [C] . Toshihiro Nakamura, Keita Onogi, Kohei Homma, Meeting of the Electrochemical Society . 2009

机译：金属化学气相沉积沉积金属氧化物膜的电阻切换
5. Chemical Control of the Oxidation State of the Metal and the Morphology of Nanostructures and Films Deposited by Metalorganic Vapor Deposition. [D] . Duan, Yichen. 2017

机译：化学控制金属的氧化态以及通过金属有机气相沉积沉积的纳米结构和薄膜的形态。
6. ToF-SIMS 3D Analysis of Thin Films Deposited in High Aspect Ratio Structures via Atomic Layer Deposition and Chemical Vapor Deposition [O] . Alireza M. Kia, Nora Haufe, Sajjad Esmaeili, 2019

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7. Electric-pulse-induced resistance switching in magnetoresistive manganite films grown by metalorganic chemical vapor deposition [O] . Nakamura T, Homma K, Tai R, 2007

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8. Ultrahigh Vacuum Metalorganic Chemical Vapor Deposition and In Situ Characterization of Nanoscale Titanium Dioxide Films [R] . Chu, P. W. 1994

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Resistive Switching in Metal Oxide Films Deposited by Metalorganic Chemical Vapor Deposition

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