A 3-5 GHz UWB LNA with an Active Balun in 0.18μm CMOS process

摘要

In this paper,a low-power ultra-wideband (UWB) low-noise amplifier (LNA) is proposed. We use shunt-feedback resistor structure for wideband input matching and series L-shunt C structure for gain flatness. Numerical simulation based on TSMC 0.18μm 1 poly-6 metal process shows that the UWB LNA achieves 18 dB gam at 3-5GHz band and 3 dB noise figure,operates from 1.8 V power supply,and dissipates 2.63 mW without the output buffer of the LNA. We also propose an active balun to reduce chip size and get more gain by operating it as an amplifier. The differential voltage output of the balun is connected to a double-balanced mixer,which circuit lias good performance for isolation.