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Combinatorial fabrication and studies of 4,4'-bis(9-carbazolyl) biphenyl (CBP)-based UV-violet OLED arrays

机译:组合制造与4,4'-BIS(9-咔唑)联苯基(CBP)的紫外线紫外线阵列的组合制造及研究

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Arrays of UV-violet [indium tin oxide (ITO)]/[copper phthalocyanine (CuPc)]/[4,4'-bis(9-carbazolyl) biphenyl (CBP)]/[2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (Bu-PBD)]/CsF/Al organic light-emitting devices (OLEDs), fabricated combinatorially using a sliding shutter technique, are described. Comparison of the electroluminescence spectrum with the photoluminescence spectrum of CBP indicates that the emission originates from the bulk of that layer. However, due to the high gap of CBP and the strong hole capture cross section of perylene contaminants, it was difficult to completely eliminate the emission from the latter. In arrays of devices in which the thickness of the CuPc and Bu-PBD were varied, but that of CBP was fixed at 50 nm, the optimal radiance R was obtained at CuPc and Bu-PBD thicknesses of 15 and 18 nm, respectively. At 10 mA/cm~2, R was 0.38 mW/cm~2, i.e., the external quantum efficiency was 1.25%; R increased to ~1.2 mW/cm~2 at 100 mA/cm~2.
机译:紫外线[氧化铟锡(ITO)] / [铜酞菁(CUPC)] / [4,4'-BIS(9-咔唑基)联苯(CBP)] / [2-(4-BIPENYLYL)-5描述于使用滑动快门技术的组合制造的 - (4-叔丁基苯基)-1,3,4-二氧基苯基)-1,3,4-二唑(BU-PBD)] / CSF / AL有机发光器件(OLED)。用CBP的光致发光光谱对电致发光光谱的比较表明发射源自该层的大部分。然而,由于CBP的高间隙和Per Berylene污染物的强孔捕获横截面,难以完全消除后者的排放。在多种CupC和Bu-PBD的厚度变化的装置阵列中,但CBP的含量为50nm,在CupC和Bu-PBD厚度为15和18nm处获得最佳辐射R.在10mA / cm〜2中,R为0.38mW / cm〜2,即外部量子效率为1.25%; R在100 mA / cm〜2的r增加到〜1.2 mw / cm〜2。

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