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Effect of PdZn film on the performance of green light-emitting diodes

机译:PdZn膜对绿色发光二极管性能的影响

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PdZn was used to improve the electrical properties of p-GaN annealed at low activation temperature for high efficiency green light-emitting diodes (LEDs). A hole concentration of p-GaN annealed at 600 °C with PdZn was almost 28 times higher than that of p-GaN annealed at 800 °C without PdZn. SIMS analysis showed that hydrogen concentration in p-GaN annealed with PdZn is decreased compared to that without using PdZn because the PdZn enhances hydrogen desorption from the Mg-doped p-GaN film at low temperature. The green MQW LED annealed at 600 °C using PdZn showed improved electrical characteristic and optical output power compared to that annealed at 800 °C without using PdZn. These results are attributed to the increase of hole concentration of p-GaN due to removal of hydrogen in p-GaN by PdZn and the decrease in thermal damage of MQW at low activation temperature.
机译:PdZn用于改善在低激活温度下退火的p-GaN的电性能,以用于高效绿色发光二极管(LED)。用PdZn在600°C退火的p-GaN的空穴浓度几乎是不使用PdZn在800°C退火的p-GaN的空穴浓度的28倍。 SIMS分析表明,与不使用PdZn相比,用PdZn退火的p-GaN中的氢浓度降低了,因为PdZn在低温下增强了从掺Mg的p-GaN膜中的氢解吸。与未使用PdZn的800°C退火相比,使用PdZn于600°C退火的绿色MQW LED显示出改善的电特性和光输出功率。这些结果归因于由于在PdZn中去除p-GaN中的氢而导致的p-GaN空穴浓度的增加以及在低活化温度下MQW的热损伤的减少。

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