Short GaAs/A1As superlattices as THz radiation sources

摘要

Semi-conductor devices based on diodes with Schottky barrier are widely used in room temperature applications in the THz frequency range. However, application of Schottky barrier diodes in these frequencies is limited by several factors: long time of carrier passage through the barrier and relatively large specific capacity. Shorter times of the response and the smaller value of specific capacity can be achieved by creation of the diodes on the basis of semiconductor superlattices. For these diodes we have also minimized values of series resistance R_s and parasitic capacity C_(par) of a substrate carrying the diode. An area of the active region of the diode was less 2×10~(-8) cm~2. Measurement results of the output power level, efficiency and output harmonics content at room temperature are shown for the devices based on the new planar superlattice diodes for input frequency ranges 10-20 GHz, 78-118 GHz and 180-240 GHz. In this report the superlattice device applications as THz radiation sources are discussed.