首页> 外文会议>Computer Architecture, 2008. ISCA '08 >A Comprehensive Memory Modeling Tool and Its Application to the Design and Analysis of Future Memory Hierarchies
【24h】

A Comprehensive Memory Modeling Tool and Its Application to the Design and Analysis of Future Memory Hierarchies

机译:一个全面的内存建模工具及其在未来内存层次结构设计和分析中的应用

获取原文

摘要

In this paper we introduce CACTI-D, a significant enhancement of CACTI 5.0. CACTI-D adds support for modeling of commodity DRAM technology and support for main memory DRAM chip organization. CACTI-D enables modeling of the complete memory hierarchy with consistent models all the way from SRAM based L1 caches through main memory DRAMs on DIMMs. We illustrate the potential applicability of CACTI-D in the design and analysis of future memory hierarchies by carrying out a last level cache study for a multicore multithreaded architecture at the 32nm technology node. In this study we use CACTI-D to model all components of the memory hierarchy including L1, L2, last level SRAM, logic process based DRAM or commodity DRAM L3 caches, and main memory DRAM chips. We carry out architectural simulation using benchmarks with large data sets and present results of their execution time, breakdown of power in the memory hierarchy, and system energy-delay product for the different system configurations. We find thatcommodity DRAM technology is most attractive for stacked last level caches, with significantly lower energy-delay products.
机译:在本文中,我们介绍CACTI-D,它是CACTI 5.0的显着增强。 CACTI-D增加了对商品DRAM技术建模的支持以及对主存储器DRAM芯片组织的支持。从基于SRAM的L1缓存到DIMM上的主内存DRAM,CACTI-D始终可以使用一致的模型对完整的内存层次进行建模。通过对32nm技术节点上的多核多线程体系结构进行最后一级的缓存研究,我们说明了CACTI-D在设计和分析未来内存层次结构方面的潜在适用性。在这项研究中,我们使用CACTI-D对存储器层次结构的所有组件进行建模,包括L1,L2,最后一级SRAM,基于逻辑进程的DRAM或商用DRAM L3高速缓存以及主存储器DRAM芯片。我们使用具有大型数据集的基准进行架构仿真,并给出其执行时间,内存层次结构中的电源故障以及针对不同系统配置的系统能耗产品的结果。我们发现,商品DRAM技术对于堆叠式末级高速缓存最有吸引力,其能耗低得多的产品。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号