A simple solution-based approach has been developed for CIGS absorber layer deposition, employing hydrazine as the solvent for all metal chalcogenide components. Advantages of the technique include the molecular (rather than nano or microparticle) nature of the precursor solutions, which enables intimate mixing of the various CIGS components before the final heat treatment, the absence of carbon, oxygen and other common contaminants from the solution, and the lack of need for a post deposition selenization treatment to achieve highquality CIGS films. Relatively smooth and compact films, with up to μm-scaled thicknesses and grain sizes, have been achieved by spin coating. Gallium and sulfur have been successfully incorporated into the Cu1−zIn1−xGaxSe2−ySy layers for x≪0.5, y≪0.6 and z≪0.15. Preliminary PV devices based on a glass/Mo/CIGS/CdS/i-ZnO/ITO structure and employing the solution-processed CIGS films have yielded efficiencies of up to 10% (AM 1.5 illumination).
展开▼
机译:已经开发出一种简单的基于溶液的方法用于CIGS吸收层沉积,采用肼作为所有金属硫属元素化物组分的溶剂。该技术的优势包括前体溶液的分子性质(而不是纳米或微粒),可以在最终热处理之前将各种CIGS组分紧密混合,溶液中不存在碳,氧和其他常见污染物,并且无需进行沉积后硒化处理即可获得高质量的CIGS膜。通过旋涂已经获得了相对平滑和致密的薄膜,具有高达微米级的厚度和晶粒尺寸。镓和硫已成功掺入Cu 1-z inf> In 1-x inf> Ga x inf> Se 2-y inf > S y inf>层,用于x≪0.5,y≪0.6和z≪0.15。基于玻璃/ Mo / CIGS / CdS / i-ZnO / ITO结构并采用溶液处理的CIGS薄膜的初步PV器件产生的效率高达10%(AM 1.5照明)。
展开▼