【24h】

ZnO-coated Ga_2O_3 nanowires

机译:ZnO包覆的Ga_2O_3纳米线

获取原文

摘要

Ga_2O_3-core/ZnO-shell coaxial nanocables were fabricated via a two-step process. While Ga_2O_3 core nanowires were synthesized by thermal heating of GaN powders, ZnO shell layers were deposited on the core nanowires by using the atomic layer deposition method. The samples were characterized by using scanning electron microscopy, X-ray diffraction (XRD), transmission electron microscopy (TEM), energy-dispersive X-ray spectroscopy (EDX), and photoluminescence spectroscopy (PL). XRD, lattice-resolved TEM, and selected area electron diffraction revealed that the coated shell layers comprised a hexagonal ZnO phase. EDX analyses were in good agreement with what can be expected for the ZnO-coated Ga_2O_3 nanowires. The shape of PL spectrum has been changed by the coating process, suggesting a contribution from ZnO shell layers.
机译:Ga_2O_3-核/ ZnO-壳同轴纳米电缆是通过两步法制备的。通过加热GaN粉来合成Ga_2O_3核心纳米线,同时采用原子层沉积法在核心纳米线上沉积ZnO壳层。通过使用扫描电子显微镜,X射线衍射(XRD),透射电子显微镜(TEM),能量色散X射线光谱(EDX)和光致发光光谱(PL)对样品进行表征。 XRD,晶格分辨的TEM和选定区域的电子衍射表明,涂覆的壳层包含六方ZnO相。 EDX分析与ZnO包覆的Ga_2O_3纳米线的预期结果吻合良好。 PL光谱的形状已被涂覆过程改变,表明ZnO壳层的贡献。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号