首页> 外文会议>International Symposium on Advanced Optical Manufacturing and Testing Technologies; 20070708-12; Chengdu(CN) >Dynamics Analysis of Photoelectron Decay in Cubic AgCl Microcrystals by Sulfur Sensitization
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Dynamics Analysis of Photoelectron Decay in Cubic AgCl Microcrystals by Sulfur Sensitization

机译:硫敏化作用在立方AgCl微晶中光电子衰减的动力学分析

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The decay curve of free photoelectron in cubic AgCl microcrystals by sulfur sensitization is obtained by microwave absorption dielectric spectrum detection technique. By comparing the free photoelectron decay curves of unsensitized and sensitized sample, we discover that sulfur sensitization centers act as shallow electron trap when sensitization time is 45min. In order to analyze the characteristics of sulfur sensitization center quantitatively, the method of the decay kinetics of photoelectron is used in this paper. We first proposed a model of sulfur-sensitized AgCl microcrystals, and then induced a series of kinetics equation. The characteristics curve of photoelectron decay is obtained by solving the kinetics equation, which is in agreement with the experimental curve. Meanwhile the concentration, trap depth and capture cross-section are obtained by computer simulation, which are 1.12ppm, 0.085eV and 1.46×10~(-18)cm, respectively. Also a possible method to study the mechanism of sulfur sensitization from the perspective of dynamics is suggested.
机译:通过微波吸收介电谱检测技术获得了立方AgCl微晶中硫致敏的自由光电子衰减曲线。通过比较未敏化样品和敏化样品的自由光电子衰变曲线,我们发现当敏化时间为45min时,硫敏化中心充当浅电子陷阱。为了定量分析硫敏化中心的特征,本文采用光电子衰变动力学方法。我们首先提出了硫敏化的AgCl微晶模型,然后推导了一系列动力学方程。通过求解动力学方程得到了光电子衰变的特征曲线,该曲线与实验曲线吻合。同时通过计算机模拟得到浓度,陷阱深度和俘获截面,分别为1.12ppm,0.085eV和1.46×10〜(-18)cm。还提出了从动力学的角度研究硫敏化机理的可能方法。

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