HIGH EFFICIENCY INDUSTRIAL SCREEN PRINTED N-TYPE MC-SI SOLAR CELLS WITH FRONT BORON EMITTER

摘要

We have developed a process to fabricate n-type solar cells on large area (156.25 cm~2) multicrystallinesubstrates involving simultaneous diffusion of phosphorous back surface field and boron emitter, screen-printedmetallization and firing through SiN_x, which leads to a record high efficiency of 16.4%. We apply a simple and costeffectivemethod to passivate industrially produced boron-doped emitters for n-type solar cells with a demonstratedefficiency enhancement of more than 2% absolute. Moreover, it is experimentally demonstrated that the optimumbase resistivity for n-type multicrystalline silicon wafers lies between 1.5 to 4 Wcm. This is a significant step forwardfor industrial production of solar cells based on n-type mc-Si.