An increasing number of IGBT are available in the market, which are designed for applications using high switching frequencies. Such applications are for example switch mode power supplies (SMPS), welding applications or UPS. These IGBT show a very low turn-off energy Eoff and fall time tf, while the saturation voltage Vce(sat) is quite high. On the other hand these devices tend to oscillations during the turn-off or to very harsh current tear-off, which increases the EMI-spectrum and needs higher effort in EMI-filtering. Especially the EMI-filter design is very time consuming and needs expensive components. This paper will compare different IGBT-technologies of fast switching IGBT in respect of switching waveforms and inductive overvoltages, which are caused by harsh current tear-off, for various gate resistors and collector currents.
展开▼
