Electrochemical etching properties of TiNi shape memory alloy (SMA), in non-aqueous electrolyte solution of LiCl-ethanol, have been studied. High etch factor (etched depth / under-cut) was obtained under small electrolytic current condition, such as low electrolyte concentration and low applied voltage. The etched surface was locally attacked like worm-eaten holes at the early stage of the etching under low electrolytic current condition. However, patterned groove could be formed after deep etching, as the result of growing up the etched holes. The etch factor higher than 1.8 was obtained with mask opening width of 20 micrometer when dc 8V was applied in 0.1mol/L LiCl-ethanol.
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机译：研究了在LiCl-乙醇的非水电解液中TiNi形状记忆合金（SMA）的电化学腐蚀性能。在小的电解电流条件下，例如低电解质浓度和低施加电压，可获得高蚀刻因子（蚀刻深度/底切）。在低电解电流条件下，在蚀刻的早期阶段，蚀刻的表面像蠕虫蚀的孔一样被局部侵蚀。然而，由于使蚀刻的孔长大，因此可以在深度蚀刻之后形成图案化的凹槽。当在0.1mol / L LiCl-乙醇中施加dc 8V时，在20微米的掩模开口宽度下获得的蚀刻因子高于1.8。
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