The Electronic Characteristics of IrSi Thin Films

机译：IrSi薄膜的电子特性

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The Schottky barrier height (SBH) of IrSi nanometer thin films prepared by pulsed laser deposition at room temperature and annealed at 600 °C has been studied. The SBH of the sample is deduced from C-V and 1-V data. These SBHs decrease with increasing measurement temperature.

机译：研究了在室温下通过脉冲激光沉积制备并在600°C退火的IrSi纳米薄膜的肖特基势垒高度（SBH）。样品的SBH由C-V和1-V数据得出。这些SBH随着测量温度的升高而降低。

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《Pacific Rim International Conference on Advanced Materials and Processing(PRICM 5) pt.5》|2005年|3363-3366|共4页
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X. Y. Ma;
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中图分类工程材料一般性问题;
关键词
IrSi polycrystalline; schottky barrier heights; C-V, I-V;

机译：IrSi多晶;肖特基势垒高度; C-V，I-V;

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The Electronic Characteristics of IrSi Thin Films

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