DEEP LEVEL TRANSIENT SPECTROSCOPY (DLTS) ON COPPER INDIUM GALLIUM DISELENIDE THINFILM SOLAR CELLS - ORIGIN OF MINORITY CARRIER TRAP IN MAJORITY DLTS

摘要

We report on deep level transient spectroscopy experiments performed on chalcopyrite thin film solar cellswith focus on trap signals below 200 K. Depending on the measurement conditions (filling pulse height or reverse bias), wedetect a minority carrier trap alone or in combination with a majority carrier signal. We propose a model where the nonsaturating leakage current in our devices determines the kind of signal observed in the DLTS experiments. Within this picturethe basic aspects of our results can be explained qualitatively.