MOCVD-Zn1-XMgXO AS A NOVEL BUFFER LAYER FOR Cu(InGa)Se2 SOLAR CELLS

摘要

We prepared MgO and Zn1-XMgXO thin films by metal organic chemical vapor deposition (MOCVD)on fused silica and Cu(InGa)(SSe)2 (CIGSSe) substrates using bis-ethylcyclopentadienyl-Mg (EtCp2Mg). The growthtemperature was varied from 115°C to 160°C and it was found that MgO thin films were grown at temperatureshigher than 145°C. Zn1-XMgXO thin films with a Mg content upto 0.15 was grown at a temperature of 130°C and itsbandgap was found to be 3.57eV. The films showed the random orientation when the substrate temperatures waslower than 130°C. On the other hand, the crystal orientation changed to [100] direction when the films were preparedhigher than 145°C. Finally, Zn0.91Mg0.09O thin film was applied as a buffer layer for CIGSSe solar cell with astructure of Al-grid/ZnO:B/Zn0.91Mg0.09/CIGSSe/Mo/SLG. In the preliminary results, the solar cell efficiency wasfound to be as high as 6.5% [Voc: 388mV, Jsc: 32.7mA/cm2, F.F.: 51.8%].