Theory and Numerical Analysis of all-Optical XOR Gate Based on Cross-Polarization Modularion Effect in a Semiconductor Optical Amplifier

摘要

In this paper, all-optical exclusive-OR (XOR) gate based on cross-polarization modulation (XPo1M) effect in a single semiconductor optical amplifier (SOA) is analyzed theoretically. We apply the nonlinear polarization rotation (NPR) theory to the all-optical XOR gate for the first time. The maximum power output optical signal is investigated under consideration of the length of the SOA and the polarization state of input signals. The optimal switching contrast ratio of the all-optical logic gate can be got over 14.8 dBm by computation. So all-optical logic gates based on XPolM effect in a SOA will be applied in future all-optical networks well.