首页> 外文会议>Fourth International Conference on Physical and Numerical Simulation of Materials Processing(ICPNS'2004): Abstract >Effect of substrate bias on microstructure andproperties of tetrahedral amorphous carbon films
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Effect of substrate bias on microstructure andproperties of tetrahedral amorphous carbon films

机译:衬底偏压对四面体非晶碳膜微结构和性能的影响

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The microstructure and properties of tetrahedral amorphous carbon (ta-C) films deposited by thefiltered cathodic vacuum arc technology has been investigated by visible Raman spectroscopy,AFM and Nano-indentor. The Raman spectra have been fitted with a single skewed Lorentzianlineshape described by BWF function defining coupling coefficient, which characterizes the degreeof asymmetry and is correlated with the sp~3 content. When the substrate bias is –80 V, the sp~3content is the most and simultaneously the coupling coefficient is the least, following with theminimum root mean square surface roughness (R_q=0.23 nm) and the highest hardness (51.49 Gpa),Young’s modulus (512.39 Gpa), and critical scratching load (11.72 mN). As the substrate bias isincreased or decreased, the sp~3 content and other properties lower correspondingly.
机译:碳纳米管沉积的四面体非晶碳(Ta-C)薄膜的微观结构和性能。 过滤阴极真空电弧技术已通过可见拉曼光谱进行了研究, AFM和纳米压头。拉曼光谱已与单个偏斜的洛伦兹拟合拟合 由BWF函数定义的线形定义了耦合系数,该系数描述了度 不对称性,并与sp〜3含量相关。当基板偏置电压为–80 V时,sp〜3 含量最大,耦合系数最小,其次是 最小均方根表面粗糙度(R_q = 0.23 nm)和最高硬度(51.49 Gpa), 杨氏模量(512.39 Gpa)和临界刮擦载荷(11.72 mN)。由于基板的偏置是 增加或减少,sp〜3含量和其他性能相应降低。

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