The mechanism of the removal of copper during CMP has been discussed by various authors. There is a consensus that two distinct mechanistic regimes exist ― one in which the copper surface is oxidized, as for example Cu_2O, and another in which the metallic copper is partially or completely exposed to the slurry and the pad. The separation of these regimes is typically shown to be a function of either H_2O_2 concentration or of pH. Using a slurry supplied by Dupont Air Products NanoMaterials and a linear polishing tool supplied by Lam Research Corp we present evidence for a bifurcated removal mechanism, in which the regimes can be defined by the removal rate.
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机译：许多作者已经讨论了在CMP中去除铜的机理。人们一致认为，存在两种不同的机理：一种是氧化铜表面（例如Cu_2O），另一种是金属铜部分或完全暴露于浆料和垫层。这些方案的分离通常显示为H_2O_2浓度或pH的函数。使用Dupont Air Products NanoMaterials提供的浆液和Lam Research Corp.提供的线性抛光工具，我们提供了分叉去除机理的证据，在该机理中，可以通过去除速率来定义状态。
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