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150nm Dense/Isolated Contact Hole Study with Canon IDEAL Technique

机译:使用佳能I​​DEAL技术进行150nm密集/隔离接触孔研究

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This paper presents the results of a joint development effort between Canon U.S.A., Inc. and Photronics, Inc. on 150nm contact hole application. A double exposure technique, Canon's IDEAL technique, is used to achieve the very small dense contact hole and isolated contact hole simultaneously. Canon's IDEAL exposure technique has shown, through numerous documented investigations, to be beneficial for extending the current lithography tool life with regards to line patterns. However it is also now equally important to evaluate IDEAL's advantages for contact holes. We look to apply the IDEAL technique to contact holes by using a Hole-shaped alternating Phase Shift Mask (alt-PSM) for the grid and a binary mask for trimming. This experiments were performed on a Canon FPA-3000EX6 5X stepper with maximum NA0.65, using JSR TMX1260Y 300nm thick resist. All masks were made by Photronics. Since image intensity imbalances of Hole shaped alt-PSMs were too large to generate a perfect grid, we exposed twice with the same Hole-shaped alt-PSM reticle. The second exposure was shifted to combine 0 degree and 180-degree space, thereby creating a well-balanced grid. Subsequently, we used a binary mask for trimming. Through this method, 0.15um dense holes and 0.15um isolated holes with simple reticle bias were resolved simultaneously, and over 0.6um common Depth of Focus (DoF) was obtained. Due to the high accuracy alignment between the PSM hole mask and binary mask from this experiment, double and triple exposure schemes can be used in actual production. Based on these experimental results, we also confirmed that the IDEAL technique allows for a 50nrn (on wafer) combination error of stage stepping and reticle alignment without inducing significant CD error. A well-balanced grid can be generated using the vertical line PSM and horizontal line PSM, by minimizing image intensity imbalances due to PSM structures, however, the three-reticle application may prove prohibitive due to the increase in reticle cost.
机译:本文介绍了佳能美国公司和Photronics公司在150nm接触孔应用上共同开发的成果。佳能的IDEAL技术是双重曝光技术,用于同时实现非常小的密集接触孔和隔离接触孔。佳能的IDEAL曝光技术通过大量的书面研究表明,对于延长当前关于线条图案的光刻工具寿命是有益的。但是,现在评估IDEAL在接触孔方面的优势也同样重要。我们希望通过对网格使用孔形交替相移掩模(alt-PSM)和对修整使用二进制掩模来将IDEAL技术应用于接触孔。使用JSR TMX1260Y 300nm厚抗蚀剂,在具有最大NA0.65的佳能FPA-3000EX6 5X步进器上进行了该实验。所有口罩均由Photronics制造。由于孔形alt-PSM的图像强度不平衡太大而无法生成完美的网格,因此我们使用相同的孔形alt-PSM掩模版进行了两次曝光。将第二次曝光偏移以合并0度和180度空间,从而创建一个平衡良好的网格。随后,我们使用了二进制蒙版进行修整。通过这种方法,同时解决了具有简单掩模版偏差的0.15um致密孔和0.15um隔离孔,并获得了超过0.6um的公共聚焦深度(DoF)。由于此实验中PSM孔掩模和二元掩模之间的高精度对准,因此在实际生产中可以使用两次和三次曝光方案。根据这些实验结果,我们还确认,IDEAL技术可实现载物台步进和掩模版对准的50nrn(晶圆上)组合误差,而不会引起明显的CD误差。通过最小化由于PSM结构而引起的图像强度不平衡,可以使用垂直线PSM和水平线PSM生成平衡良好的栅格,但是,由于标线片成本的增加,三标线片的应用可能被禁止。

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