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Improvement of Alt-PSM Production Process Using Backside Phase Measurement Method

机译:背面相测量法改进Alt-PSM生产工艺

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An alternating phase shift mask (Alt-PSM) enhances resolution and focus margin in wafer print. Therefore it comes into increasing use for device fabrication by KrF and ArF lithography. We have started production of alt-PSMs using quartz etched shifter and single trench structure, which are made by a two-step quartz etching process. This two-step quartz etching process has three writing steps; they are for chrome etching, quartz dry etching and quartz wet etching. We improved alt-PSM production process by using new backside phase measurement method. Consequently phase mean deviation from 180 degree was improved from +/-2.0degree to +/-1.5degree. And process steps reduced from 16 to 12 steps because twice alignment writing became once.
机译:交替相移掩模(Alt-PSM)可以提高晶圆打印中的分辨率和聚焦裕度。因此,它越来越多地用于通过KrF和ArF光刻制造器件。我们已开始使用通过两步石英蚀刻工艺制造的石英蚀刻移位器和单沟槽结构生产alt-PSM。这个分两步的石英刻蚀过程包括三个写入步骤:它们用于铬蚀刻,石英干蚀刻和石英湿蚀刻。通过使用新的背面相位测量方法,我们改进了alt-PSM的生产工艺。结果,从180度的相位平均偏差从+/- 2.0度提高到了+/- 1.5度。由于两次对齐写入变为一次,因此处理步骤从16步减少到12步。

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