Photoluminescence Study on Temperature Dependence of Band Gap Energy of GaAsN Alloys

摘要

We have studied the temperature dependence of photoluminescence (PL) spectra of GaAsN alloys. The PL peak energy shift due to the temperature change decreases with increasing N concentration of GaAsN alloys. The localized state emission partly contributes to the decrease in the PL peak energy shift. In addition, the small PL peak energy shift at high temperatures is due to the reduction in the temperature dependence of the band gap energy. From the analysis using the Bose-Einstein statistical expression, the average phonon energy is much larger than that expected from the linear interpolation between GaAs and GaN, indicating that the interaction between electrons and phonons localized at N atoms plays an important role in the reduction of the temperature dependence of the band gap energy of GaAsN alloys.