MONITORING OF THE POLYMORPHOUS/SILICON INTERFACE PROPERTIES IN THE HIT SOLAR CELL BY SURFACE PHOTOVOLTAGE TECHNIQUE IN AN EXPANDED SPECTRAL REGION

摘要

We report investigation of performances of heterojunction with an intrinsic thin layer (HIT) solar cells where the intrinsic polymorphous silicon is deposited on crystalline silicon wafers the surface of which was treated in two different ways, either by plasma etching or by hydrofluoric acid etching. Then the process is followed by the deposition of an n+ amorphous silicon layer that together with the intrinsic pm-Si:H layer serves both for the interface passivation and part of the emitter. We use the surface photovoltage method (SPV) in the expanded spectral region to investigate the recombination processes in the emitter. The modelling of such SPV data can give valuable information about the recombination processes on the silicon/aSi:H interface and also about the transport through a complete HIT solar cell. The SPV results clearly proof the beneficial influence of the hydrofluoric acid etching compared to the plasma etching.