A new method for the fabrication of mesoscopic polysilicon wires lying on a silicon dioxide is presented. Using surface micromachining combined with an usual microelectronic planar process, polysilicon wires of the following dimensions have been obtained: 250 nm wide, about 650 nm thick, from 100 μm up to 140 μm long. Because of their high surface/volume ratio, these wires have given very good results as high sensitivity mesoscopic H_2 sensors.
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