Improved strained GaAsP photocathodes

摘要

The parameters of spin-polarized electron photocathode based on strained layer GaAs_(0.95)P_(0.05) / GaAs_(0.7)P_(0.3) structure have been improved on the base of X-ray, Raman and polarized photoluminescence studies of such structure. The polarization maximum value 86% in conjunction with Y = 0.16% makes such cathodes one of the best no matter where.