Feshbach resonances in Si~-,Ge~- and Sn~- negative ion photodetachment

摘要

A new improved study of resonance features has been made in the photodetachment process from such strong correlated system as negative ions with np~3 half-filled shells. The photodetachment cross sections from two outer shells of Si~-, Ge~- and Sn~- negative ions have been calculated with account of many electron correlations. The formation and autodetachment of the quasi-bound "nsnp~4" states revealed themselves as a very sensitive interference structure in the cross section.