NEXT GENERATION GaInP/GaInAs/Ge MULTI-JUNCTION SPACE SOLAR CELLS

摘要

The efficiencies of 3-junction space solar cells can be increased up to 31 % (AM0) by using GaInAs as a middle cell material instead of GaAs in the standard GaInP/GaAs/Ge space solar cell. This paper describes cell results and problems concerning the growth of these lattice mismatched materials. In addition, new ideas for the next generation of space solar cells are presented. As power demands for satellites are rising, higher and higher efficiencies are required. This is especially true for the performance of the cells at the end of a mission (EOL). Therefore, concepts for increasing the radiation hardness of space solar cells under proton and electron irradiation have to be developed.