Signatures of Electron-Electron Interaction in Nanoelectronic Device Shot Noise

摘要

In this paper we review and discuss the effects of electron-electron interaction on shot noise. We will focus on nanoelectronic devices, which are an extremely interesting field of study for this subject, since the possible transport regimes, and the wide range of interaction strength between carriers, cause a large variety of noise behaviours. The fact that noise is much more sensitive to electron-electron interaction than steady state transport, and the recent advances in measurement techniques, have caused an increasing interest for this subject. Since this is a relatively new topic, results date at most a decade, and there are still many points that need to be clarified and investigated in deeper detail. We will highlight such points and discuss the possible approaches to the solution of problems which are still open.