The optoelectronic properties of CdSe:Cu photoconductive detector

摘要

The photoconductive detector CdSe: Cu was fabricated as a thin film of (1 mu m) in thickness. Doping with Cu was implemented using vacuum annealing under argon atmosphere. The structure of the prepared films was studied using both scanning electron microscope and X-ray diffractometer. The morphology results indicate that the structure of the pure CdSe thin film was amorphous and was a polycrystalline for doped CdSe in (1.2 wt percent) Cu contents. Better crystallinity was observed for CdSe: Cu thin film as the Cu contents increased to (3, 5 wt percent). Direct energy gaps of CdSe and CdSe:Cu were determined as a function of Cu doping in CdSe thin films. The band gaps were found to be (1.76, 1.72, 1.70 and 1.68 eV) for the case of (pure. 1.3 and 5wt percent) respectively. The photoconductivity was shown to increase with Cu doping concentrations and show better results at (5wt percent) of Cu.