The InAs_(1-x)P_x(Bi)/InAs thermo-PV and InSb_(1-x)As_x(Bi)/InSb PV-structures growth by liquid-sources version of liquid-phase electroepitaxy

摘要

The either p-InAs_(1-x)P_x / n-InAs and p-InAs_(1-x)P_x (Bi) / n-InAs thermo- PV, or n-InSb_(1-x)As_x / p-InSb and n-InSb_(1-x)As_x(Bi) / p-InSb PV - structures have been grown by liquid sources version of liquid phase electroepitaxy. The quality of grown layers was investigated of X-ray topograms. The current -voltage and current - capacity characteristics of grown diode heterostructures were explored. It was demonstrated that introducing of Bi atoms (N_(Bi)< 10~(19) cm~(-3)) to the InAs_(1-x)P_x and InSb_(1-x)As_x layers leads to increasing of layers perfection (decreasing of misfit dislocation density) and improving of electrophysical and optical characteristics of thermo -- PV and PV - structures.