Modelling of the PVT-SiC Bulk Growth Process Taking into Account Global Heat Transfer, Mass Transport and Heat of Crystallization and Results on its Experimental Verification

摘要

Results of numerical global heat transfer analysis is inductively heated SiC growth reactors are presented and compared to measured process temperatures showing good agreement. The thermal conditions inside the SiC powder are investigated revealing a highly non-uniform temperature distribution. A physical model approach is introduced which takes into account both mass transfer including Stefan flux and heat transfer with the generation of latent heat at the phase boundaries solid/vapor. SiC crystals have been grown and their growth rate has been determined experimentally in dependence of process time showing a transient behavior. The simulation predicts that, under the investigated growth conditions, the decrease of crystallization rate with process time results from heat transfer limitations.