Effect of struycture parameters on radiation resistance of AlGaAs/GaAs solar cells with internal bragg reflector

摘要

The effect of base doping and base thickness on the radiation resistance of AlGaAs/GaAs solar cells with internal Bragg reflector is investigated. Efficiency and related cell parameters is presented for concentrator solar cells before and after 3 MeV electrons exposure to up to 3*10 sub 15 cm sub -2 fluence. A base doping of 1 * 10 sub 15 cm sub -3 and base thickness of 1.1-1.6 mum gave the EOL AM0 efficiency of 15.8