Improvement of laser-induced damage threshold in CZ-BBO by reducing the light scattering center with annealing

摘要

The laser-induced damage threshold in β -BaB_2O_4 grown by Czochralski method ( CZ-BBO ) is improved by annealing at 920°C to reduce the intensity of scattered light in the crystal. Experiments indicate that the reduction is generated as a result of dipole radiation vibrated along the z-axis. The threshold in 266 nm of annealed CZ-BBO is improved to 3.4 GW/cm~2, which is 1.70 times higher than that of as-grown CZ-BBO and 1.13 times higher than that of as-grown Flux-BBO.