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New amorphous-silicon image sensor for x-ray diagnostic medical imaging a

机译:用于X射线诊断医学成像的新型非晶硅图像传感器

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Abstract: This paper introduces new high-resolution amorphous Silicon (a-Si) image sensors specifically configured for demonstrating film-quality medical x-ray imaging capabilities. The devices utilizes an x-ray phosphor screen coupled to an array of a-Si photodiodes for detecting visible light, and a-Si thin-film transistors (TFTs) for connecting the photodiodes to external readout electronics. We have developed imagers based on a pixel size of 127 micrometer $MUL 127 micrometer with an approximately page-size imaging area of 244 mm $MUL 195 mm, and array size of 1,536 data lines by 1,920 gate lines, for a total of 2.95 million pixels. More recently, we have developed a much larger imager based on the same pixel pattern, which covers an area of approximately 406 mm $MUL 293 mm, with 2,304 data lines by 3,200 gate lines, for a total of nearly 7.4 million pixels. This is very likely to be the largest image sensor array and highest pixel count detector fabricated on a single substrate. Both imagers connect to a standard PC and are capable of taking an image in a few seconds. Through design rule optimization we have achieved a light sensitive area of 57% and optimized quantum efficiency for x-ray phosphor output in the green part of the spectrum, yielding an average quantum efficiency between 500 and 600 nm of approximately 70%. At the same time, we have managed to reduce extraneous leakage currents on these devices to a few fA per pixel, which allows for very high dynamic range to be achieved. We have characterized leakage currents as a function of photodiode bias, time and temperature to demonstrate high stability over these large sized arrays. At the electronics level, we have adopted a new generation of low noise, charge- sensitive amplifiers coupled to 12-bit A/D converters. Considerable attention was given to reducing electronic noise in order to demonstrate a large dynamic range (over 4,000:1) for medical imaging applications. Through a combination of low data lines capacitance, readout amplifier design, optimized timing, and noise cancellation techniques, we achieve 1,000e to 2,000e of noise for the page size and large size arrays, respectively. This allows for true 12-bit performance and quantum limited images over a wide range of x-ray exposures. Various approaches to reducing line correlated noise have been implemented and will be discussed. Images documenting the improved performance will be presented. Avenues for improvement are under development, including higher resolution 97 micrometer pixel imagers, further improvements in detective quantum efficiency, and characterization of dynamic behavior. !18
机译:摘要:本文介绍了专门配置用于展示胶片质量的医学X射线成像功能的新型高分辨率非晶硅(a-Si)图像传感器。这些设备利用耦合到a-Si光电二极管阵列以检测可见光的x射线荧光屏和用于将光电二极管连接到外部读出电子设备的a-Si薄膜晶体管(TFT)。我们开发了基于127微米$ MUL 127微米的像素大小,约244毫米的页面大小$ MUL 195毫米的图像大小,1,536条数据线和1,920条选通线的阵列大小的成像器,总计295万像素。最近,我们基于相同的像素模式开发了一种更大的成像器,其覆盖约406 mm×MUL 293 mm的面积,具有2,304条数据线和3,200条栅极线,总计近740万像素。这很可能是在单个基板上制造的最大图像传感器阵列和最高像素数检测器。两个成像器都连接到标准PC,并能够在几秒钟内拍摄图像。通过设计规则优化,我们获得了57%的光敏面积,并优化了光谱绿色部分中X射线荧光粉输出的量子效率,从而在500和600 nm之间产生了大约70%的平均量子效率。同时,我们设法将这些设备上的外部泄漏电流减小到每个像素几fA,这可以实现非常高的动态范围。我们已经将泄漏电流表征为光电二极管偏置,时间和温度的函数,以证明在这些大型阵列上的高稳定性。在电子方面,我们采用了与12位A / D转换器耦合的新一代低噪声,电荷敏感型放大器。为了展示用于医学成像应用的大动态范围(超过4,000:1),人们对降低电子噪声给予了极大的关注。通过结合低数据线电容,读出放大器设计,优化的时序和噪声消除技术,我们分别为页面大小和大尺寸阵列实现了1,000e至2,000e的噪声。这样可以在广泛的X射线曝光范围内实现真正的12位性能和量子受限的图像。减少线路相关噪声的各种方法已经实现并且将进行讨论。将显示记录改进性能的图像。改进的途径正在开发中,包括分辨率更高的97微米像素成像器,探测量子效率的进一步改进以及动态行为的表征。 !18

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