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Growth Surface dependence of Cathodoluminescence of Cubic Boron Nitride

机译:立方氮化硼阴极发光的生长表面依赖性

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We have investigated cathodoluminenscence of a type of commercially available cBN crystals. Four kinds of luminescence bands were seen in a given crystal. Three of them have been reported and named the O-center, the T-center and the UCL, but the other one, which has a broad peak around 350 nm, has not been doucmented. Clear growth surface dependence ofthe ans was seen: the O-center was present on nitrogen teminated{111}, the T-center and the undocumented broad band were on boron terminated {111} and the UCL was on {100}. The O-center and UCL were intensified with annealing at 1600 degree and 6 GPa.
机译:我们已经研究了一种可商购的cBN晶体的阴极发光。在给定的晶体中观察到四种发光带。已经报道了其中三个,并命名为O中心,T中心和UCL,但是没有另一个在350 nm附近具有宽峰。观察到了ans明显的生长表面依赖性:O中心存在于氮封端的{111}上,T中心和未记录的宽带位于硼封端的{111}上,UCL处于{100}上。 O中心和UCL在1600度和6 GPa的退火下增强。

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