LOW TEMPERATURE CRYSTALLIZATION OF SrBi_2Ta_2O_9 FILM BY EXCIMER LASER IRRADIATION

摘要

Using a KrF or ArF excimer laser as an irradiation photon source, we have succeeded in crystallizing amorphous SrBi_2Ta_2O_9 films at 200-290 °C, quite lower temperatures than the conventional crystallization temperature. The crystallization is enhanced when the substrate temperature, irradiation time, or the laser power density is higher.