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Advances in crystal growth for semiconductor materials

机译:半导体材料晶体生长的进展

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Microelectronics, opto-electronics, photonics, bio-electronics, high-power/high-temperature/high-frequency devices, electronics for harsh environments, MEMS (micro-electro-mechanical systems), lasers sensors and photovolatics, all require semiconductor wafers of large diameter, high-quality and low-ocst, for device fabrication. Although "silicon technology" has been synonymous with semiconductor technology, rencent breakthroughs in fiber optic communications, radar antennas, infra-red devices, semiconductor laser, cellular phones, outdoor TV's, etc. would not have been possible whtout the advancements in devices based on III-V and II-VI compounds, and oxides. Exiting applications await the availability of high-quality, low cost substrates of silicon carbide, gallium nitride, zine oxide and many other difficult-to-grow materials.
机译:微电子,光电子,光子,生物电子,高功率/高温/高频装置,用于恶劣环境的电子产品,MEMS(微机电系统),激光传感器和光散热镜,都需要半导体晶片大直径,高品质和低OCST,用于器件制造。虽然“Silicon Technology”一直是半导体技术的代名词,但光纤通信,雷达天线,红外设备,半导体激光器,蜂窝电话,户外电视等的策略突破将不可能Whtout基于的设备的进步III-V和II-VI化合物和氧化物。退出应用等待高质量,低成本基板的碳化硅,氮化镓,氧化锆和许多其他难以生长的材料的可用性。

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