Abstract: We have previously shown that a copolymer of p-hydroxstyrene and p-acetoxymethylstyrene can be used as a sensitive deep UV resist. In that study we demonstrated that a formulation of this copolymer and an onium salt could be exposed, baked and developed in aqueous base to yield a high resolution negative tone relief image. In this paper we discuss a gas phase silylation process that converts this negative tone solvent-developable resist system into a positive tone dry-developable resist system. We have used an FT-IR microscope, coupled to a motorized X-Y stage, to study the silylation process as a function of UV exposure dose and silylation processing parameters. By altering the copolymer ratio, we found that resist contrast increased when the amount of acetoxymethylstyrene increased. This resist system and dry develop process were used to print 0.35 $mu@m images at a DUV dose of approximately 25 mJ/cm$+2$/. !12
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机译：摘要：我们以前已经证明对羟基苯乙烯和对乙酰氧基甲基苯乙烯的共聚物可以用作敏感的深紫外线抗蚀剂。在那项研究中，我们证明了该共聚物和鎓盐的配方可以在水性碱中曝光，烘烤和显影，以产生高分辨率的负色调浮雕图像。在本文中，我们讨论了气相甲硅烷基化工艺，该工艺会将这种负性溶剂型可显影抗蚀剂体系转换为正性干性可显影抗蚀剂体系。我们已将FT-IR显微镜与电动X-Y平台耦合使用，研究了甲硅烷基化过程随紫外线暴露剂量和甲硅烷基化工艺参数的变化。通过改变共聚物比例，我们发现当乙酰氧基甲基苯乙烯的量增加时，抗蚀剂对比度增加。该抗蚀剂系统和干显影工艺用于以约25mJ / cm 2 +2 2的DUV剂量印刷0.35μm的图像。 ！12
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