Broad Transconductance Plateau Region and High Current GaAs/InGaAs Pseudomorphic HENT's Utilizing A Graded Inx Ga1-xAs Channel

摘要

A new ¿-doped GaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor(HEMT) utilizing a graded In composition in InxGa1-xAs quantum well grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) was demonstrated. For a gate geometry of 2 × 100 ¿m², the studied new structure revealed superior extrinsic transconductance and saturation current density of 175 mS/mm and 500 mA/mm at 300 K respectively. The transconductance versus gate bias profile showed a flat plateau region of 2 V. High breakdown (≫ 10 V) and low leakage current were also observed.