Two-dimensional profiling of doped layers bD spreading resistance measurements and atomic force microscopy on chemical etched surfaces

摘要

The most recent developments of the two-dimensional spreading resistance profiling technique are illustrated. The method is successfully applied to the investigation of boron lateral diffusion under a polysilicon mask with a lateral resolution of 50 nm. A parallel study of a two-dimensional characterization method based on atomic force microscopy of chemically etched samples is reported. The latter has shown the possibility to observe more than one iso-concentration line within the same sample with high resolution (≪ 10nm).