High-sensitivity, Polysilicon-emitter Phototransistors

摘要

Phototransistors were prepared and investigated with polysilicon emitter. The high current gain (till 10⁴) ensured a very high light sensitivity as compared to normal phototransistors. The spectral sensitivity was also more favorable. Transistors with an interfacial tunnel oxide layer show a much better performance than the transistors without it. Also higher current amplifications were obtained in the case of ≪100≫ oriented substrate.