BICMOSG³ Cell - A Novel High-Speed DRAM Cell Taking Full Advantage of BICMOS Technology

摘要

The BiCMOSG³ cell, a novel high density memory cell using BiCMOS technology is described. The cell is based on merging four transistors and occupies approximately the area of a single MOS transistor. The implementation of three gain mechanisms and a bipolar output driver transistor into the cell ensures both a very high operation speed and a bit line read out signal of about 1 volt using only operation voltages between 0 and 5 volts. The BiCMOSG³ cell allows a completely selective access to single cells or groups of them. Therefore, the recharging of unselected bit lines is not necessary and the power dissipation of an array based on BiCMOSG³ cells is reduced compared to one-transistor cells.