Accurate Channel Temperature Measurement in GaN-based HEMT Devices and its Impact on Accelerated Lifetime Predictive Models

摘要

Measurements of the channel temperature in a GaN-based HEMT device under DC bias are presented using IR thermal imaging, as well as μ-Raman and μ-PL spectroscopies for the same device. Comparison of the measured temperature values with simulated profiles from a full Sentaurus electro-thermal model can be used to validate the model and fine tune the materials-related simulation parameters. In addition, this comparison provides an estimate of the temperature error associated with each of these techniques and demonstrates the strengths and limitations of each method.