Anodic oxidation is a known technique to determine the thickness of certain metallic layers. We show that this method is also applicable for thin NbN layers (2-13 nm). Nbn Hot-Electron bolometers need the preparation of 3-10 nm thick NbN films, which now can be measured before continuing the processing. Secondly, we report on the fabrication of ressitive NbN thin films. Our films have a resistivity of 210 muomega centre dot cm, which is almost constant within a temperature range of 4 K to 300 K. Therefore, these films can be used as integrated resistors in Nb or NbN based mixer technology.
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