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Degradation of electrochromic film of amorphous tungsten oxide after coloration

机译:着色后非晶态氧化钨电致变色膜的降解

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Abstract: The degradation of the electrochromic film of a-WO$-3$/ was investigated from the equilibrium state of different driving voltage and the time dependent emf was also obtained in an open or short circuit of zero volts. Based on the mechanism of activation and the principal of chemical reaction kinetics, the correct definition of electrochromic memory was made and a relation of memory was obtained. It was also found that at the initial time of natural bleaching, the change rate of proton concentration in the film was also obtained. According to the mechanism of electrochromic memory, it was indicated that in the open circuit case, the theoretical reaction of the change rate of electric potential was in good agrement with the experimental results, and furthermore, the reaction constant was determined with the experimental data. In the short circuit case, there exist two effects on degradation, the short circuit current caused by the backward emf, and the oxidation of the colored film. The experimental data shows that, in the short circuit case, the degradation strongly depends on the short circuit current and the effect of chemical reaction can be neglected. !7
机译:摘要:从不同驱动电压的平衡状态出发,研究了电致变色膜a-WO $ -3 $ /的降解情况,并且在零伏开路或短路状态下也获得了随时间变化的电动势。基于活化机理和化学反应动力学原理,对电致变色记忆进行了正确定义,并建立了记忆关系。还发现在自然漂白的初始时间,也获得了膜中质子浓度的变化率。根据电致变色存储器的机理,表明在开路情况下,电位变化率的理论反应与实验结果吻合良好,而且反应常数由实验数据确定。在短路情况下,对劣化有两个影响,一个是反电动势引起的短路电流,另一个是着色膜的氧化。实验数据表明,在短路情况下,退化很大程度上取决于短路电流,并且可以忽略化学反应的影响。 !7

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